Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors, Volume 1 By
2000 | 833 Pages | ISBN: 3527298347 | PDF | 24 MB
2000 | 833 Pages | ISBN: 3527298347 | PDF | 24 MB
Covering the structure and properties of semiconductors, this volume places particular emphasis on concepts relevant to semiconductor technology. Of interest to physicists and engineers in research and in the electronics industry, this is a valuable reference source and state-of-the-art review by the world's top authors. Content: Chapter 1 Band Theory Applied to Semiconductors (pages 1–67): Michel LannooChapter 2 Optical Properties and Charge Transport (pages 69–120): R. G. UlbrichChapter 3 Intrinsic Point Defects in Semiconductors 1999 (pages 121–165): George D. WatkinsChapter 4 Deep Centers in Semiconductors (pages 167–229): Helmut FeichtingerChapter 5 Point Defects, Diffusion, and Precipitation (pages 231–290): T. Y. Tan and U. GoseleChapter 6 Dislocations (pages 291–376): Helmut Alexander and Helmar TeichlerChapter 7 Grain Boundaries in Semiconductors (pages 377–451): Jany Thibault, Jean?Luc Rouviere and Alain BourretChapter 8 Interfaces (pages 453–540): R. Hull, A. Ourmazd, W. D. Rau, P. Schwander, M. L. Green and R. T. TungChapter 9 Material Properties of Hydrogenated Amorphous Silicon (pages 541–595): R. A. Street and K. WinerChapter 10 High?Temperature Properties of Transition Elements in Silicon (pages 597–660): Wolfgang Schroter, Michael Seibt and Dieter GillesChapter 11 Fundamental Aspects of SiC (pages 661–713): Wolfgang J. Choyke and Robert P. DevatyChapter 12 New Materials: Semiconductors for Solar Cells (pages 715–769): Hans Joachim MollerChapter 13 New Materials: Gallium Nitride (pages 771–808): Eicke R. Weber, Joachim Kruger and Christian Kisielowski