Tags
Language
Tags
<<
June 2025
Su Mo Tu We Th Fr Sa
1 2 3 4 5 6 7
8 9 10 11 12 13 14
15 16 17 18 19 20 21
22 23 24 25 26 27 28
29 30 1 2 3 4 5
    Attention❗ To save your time, in order to download anything on this site, you must be registered 👉 HERE. If you do not have a registration yet, it is better to do it right away. ✌

    ( • )( • ) ( ͡⚆ ͜ʖ ͡⚆ ) (‿ˠ‿)
    SpicyMags.xyz
    1. Home
    2. eBooks & eLearning
    3. The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

    The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

    Posted By: DZ123
    Date: 23 May 2020 22:27:19
    The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

    Zhiqiang Li, "The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices"
    English | 2016 | ISBN: 366249681X | PDF | pages: 71 | 3.8 mb

    This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced  source/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
    UPWARDS