GaN-Based Laser Diodes: Towards Longer Wavelengths and Short Pulses (repost)
GaN-Based Laser Diodes: Towards Longer Wavelengths and Short Pulses by Wolfgang G. Scheibenzuber
English | ISBN: 3642245374, 3642435483 | 2012 | 109 pages | PDF | 2,3 MB
English | ISBN: 3642245374, 3642435483 | 2012 | 109 pages | PDF | 2,3 MB
The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications.
Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.