Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations
English | 2022 | ISBN: 3030424235 | 693 Pages | PDF EPUB | 89 MB
English | 2022 | ISBN: 3030424235 | 693 Pages | PDF EPUB | 89 MB
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling.