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    3. SiC Power Module Design: Performance, robustness and reliability

    SiC Power Module Design: Performance, robustness and reliability

    Posted By: roxul
    Date: 17 Dec 2021 16:28:29
    SiC Power Module Design: Performance, robustness and reliability

    Alberto Castellazzi, "SiC Power Module Design: Performance, robustness and reliability "
    English | ISBN: 1785619071 | 2022 | 360 pages | PDF | 30 MB

    High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging.
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