Gallium Nitride (GaN): Physics, Devices, and Technology by Farid Medjdoub
English | 15 Oct. 2015 | ISBN: 1482220032, 1138893358 | 388 Pages | PDF | 19.07 MB
English | 15 Oct. 2015 | ISBN: 1482220032, 1138893358 | 388 Pages | PDF | 19.07 MB
Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.